Integrated circuit tester probe contact liner

ABSTRACT

An integrated circuit (IC) device tester includes contact probes. A liner is formed upon the contact probes. The liner includes a matrix of an electrical conductor and glass. The conductor of the liner provides for the contact probe to be electrically connected to the IC device contact. The glass of the liner prevents IC device contact material adhering thereto. The liner may be formed by applying a conductive glass frit upon a probe card that includes the probe contacts and locally thermally conditioning the conductive glass frit upon contact probes. By locally thermally conditioning the conductive glass frit, the temperature of the probe card may be maintained below a critical temperature that damages the probe card.

FIELD

Embodiments of invention generally relate to integrated circuit (IC)device testers, such as a wafer prober, that include probe contacts.More particularly, embodiments relate to fabricating a liner upon probecontacts of the IC device tester.

BACKGROUND

An IC device tester is a system used for electrical testing of ICdevices, such as dies, wafers, or the like. Test signals from the ICdevice tester are transmitted to the IC device by way of contact probesthat are upon a probe card and the test signals are then returned fromthe IC device for analysis. After the test, the contact probes areforced away from contacts of the IC device.

SUMMARY

In an embodiment of the present invention, a method of testing anintegrated circuit (IC) device is presented. The method includes passingan incoming electrical current from a probe contact through a conductiveglass matrix liner upon the probe contact to an IC device contact. Themethod also includes receiving, with the probe contact, a returnelectrical current from the IC device contact through the conductiveglass matrix liner.

In another embodiment of the present invention, a method of fabricatingan integrated circuit (IC) device probe card is presented. The methodincludes forming a conductive glass frit upon a probe contact andlocally thermally conditioning the conductive glass frit to form aconductive glass matrix liner upon the probe contact.

In another embodiment of the present invention, a method of fabricatingan integrated circuit (IC) device probe card is presented. The methodincludes forming a conductive glass frit upon a probe card and upon aprobe contact and thermally conditioning the conductive glass fritnearest the probe contact to form a conductive glass matrix liner uponthe probe contact.

These and other embodiments, features, aspects, and advantages willbecome better understood with reference to the following description,appended claims, and accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention are attained and can be understood in detail, a moreparticular description of the invention, briefly summarized above, maybe had by reference to the embodiments thereof which are illustrated inthe appended drawings.

It is to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 depicts views of an exemplary IC device tester which mayimplement one or embodiments of the present invention.

FIG. 2 depicts a cross section view of head assembly components of an ICdevice tester, in accordance with one or more embodiments of the presentinvention.

FIG. 3 depicts a normal view of a IC device facing surface of a probecard, in accordance with one or more embodiments of the presentinvention.

FIG. 4 depicts a normal view of a wafer, in accordance with one or moreembodiments of the present invention.

FIG. 5 depicts a detailed normal view of a wafer, in accordance with oneor more embodiments of the present invention.

FIG. 6 depicts a cross section view of IC device tester probes inelectrical contact with IC device contacts, in accordance with one ormore embodiments of the present invention.

FIG. 7 depicts residual IC device contact material upon IC device testerprobes, in accordance with one or more embodiments of the presentinvention.

FIG. 8-FIG. 11 depict cross section views of probe card fabricationstages, in accordance with one or more embodiments of the presentinvention.

FIG. 12-FIG. 15 depict cross section views of probe card fabricationstages, in accordance with one or more embodiments of the presentinvention.

FIG. 16 depicts a cross section view of probe head components of an ICdevice tester, in accordance with one or more embodiments of the presentinvention.

FIG. 17 depicts a cross section view of an IC device tester probe inelectrical contact with an IC device contact, in accordance with one ormore embodiments of the present invention.

FIG. 18 depicts a cross section view of an IC device tester probeseparated from an IC device contact, in accordance with one or moreembodiments of the present invention.

FIG. 19 depicts an exemplary method of fabricating an IC device testerprobe card, in accordance with one or more embodiments of the presentinvention.

FIG. 20 depicts an exemplary method of fabricating an IC device testerprobe card, in accordance with one or more embodiments of the presentinvention.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the invention. The drawings are intended to depict only exemplaryembodiments of the invention. In the drawings, like numbering representslike elements.

DETAILED DESCRIPTION

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it can be understood that the disclosed embodiments aremerely illustrative of the claimed structures and methods that may beembodied in various forms. These exemplary embodiments are provided sothat this disclosure will be thorough and complete and will fully conveythe scope of this invention to those skilled in the art. In thedescription, details of well-known features and techniques may beomitted to avoid unnecessarily obscuring the presented embodiments.

Embodiments of invention relate to an IC device tester that includescontact probes. A liner is formed upon the contact probes. The linerincludes a matrix of an electrical conductor and glass. The conductor ofthe liner provides for the contact probe to be electrically connected tothe IC device contact. The glass of the liner prevents IC device contactmaterial adhering thereto. The liner may be formed by applying aconductive glass frit upon a probe card that includes the probe contactsand locally thermally conditioning the conductive glass frit uponcontact probes. By locally thermally conditioning the conductive glassfrit, the temperature of the probe card may be maintained below acritical temperature that damages the probe card.

Referring now to the figures, wherein like components are labeled withlike numerals, exemplary structures of a semiconductor device, inaccordance with embodiments of the present invention are shown and willnow be described in greater detail below. The specific number ofcomponents depicted in the figures and the cross-section orientation waschosen to best illustrate the various embodiments described herein.

FIG. 1 depicts views of an exemplary IC device tester 10 which mayimplement one or embodiments of the present invention. IC device tester10 may include a head assembly housing 12, a wafer chuck housing 14, awafer housing 16, a wafer housing 18, an analyzer 19, and a cable 23.Head assembly housing 12 may be rotatable relative to wafer chuckhousing 14, wafer housing 16, a wafer housing 18. Head assembly housing12 includes head assembly 20. Wafer chuck housing 14 includes waferchuck 30 and may also include a robotic arm that moves a wafer 34 fromwafer housing 16 to wafer chuck 30 and from wafer chuck 30 to waferhousing 18.

Head assembly 20 may include a probe card 22, a probe head 24, and ahead body 26. To conduct a test of wafer 34, contact probes of the probecard 22 electrically contact wafer 34 contacts. The head assembly 20 maybe moveably relative to wafer chuck 30. As such, the probe card 22 maytest one die of wafer 34 and, subsequently, wafer chuck 30 may move andthe probe card 22 may test a different die of wafer 34. Probe head 24electrically connects the probe card 22 to the head body 26.

Test signals from the IC device tester 10 are transmitted from theanalyzer 19 by cable 23 to the head body 26. These test signals are thentransferred from the head body 26 to the probe head 24, to the probecard 22, to the contact probes of probe card 22, and ultimately to thecontacts of wafer 34. The test signals are then returned from wafer 34to analyzer 19 for analysis.

Once the test of the wafer 34 is completed, the tested wafer 34 may bemoved into wafer housing 18, and a new wafer may be moved from waferhousing 16 to chuck 30 for testing.

FIG. 2 depicts a cross section view of head assembly 20 components of ICdevice tester 10, in accordance with one or more embodiments of thepresent invention. More specifically, FIG. 2 depicts probe card 22 andprobe head 24. Probe head 24 may include a contact grid 40 of contacts42. Grid 40 may be organized into rows and columns of contacts 42. Grid40 may be a square matrix of contacts 42.

Probe card 22 may include a contact grid 60 of contacts 62. Grid 60 maybe organized into rows and columns of contacts 62. Grid 60 may be asquare matrix of contacts 62. Grid 40 of contacts 42 may be electricallyconnected to the grid 60 of contacts 62 by interconnects 50. Forexample, a grid of interconnects 50 may electrically connect grid 40 andgrid 60, as one interconnect 50 electrically connects one contact 42with one contact 62. Interconnects 50 may be solder, pins, fuzzybuttons, posts, or the like.

Probe card 22 includes an IC device facing surface 23 that includes agrid 70 of probe contacts 72. Grid 70 may be organized into rows andcolumns of contacts 72. Grid 70 may be a square matrix of contacts 72.Grid 70 of contacts 72 may be electrically connected to grid 60 ofcontacts 62 by internal wiring within probe card 22. Contacts 72 may beformed upon probe card 22 by known fabrication techniques and may beformed from a conductive material, such as metal. In a particularembodiment, contacts 72 may be formed from copper.

Electrical pathways, that may be isolated relative to each other, existsfrom the analyzer 19, through cable 23, through the head body 26,through the probe head 24, through the probe card 22, to a particularcontact probe 72 of probe card 22. The test signals may be sent fromanalyzer 19 to wafer 34 and returned from the wafer 34 to analyzer 19 byway of the electrical pathways.

FIG. 3 depicts a normal view of IC device facing surface 23 of probecard 22, in accordance with one or more embodiments of the presentinvention. As depicted, grid 70 may be a square matrix organized by rowsand columns of contacts 72. Though an exemplary number of contacts 72are depicted, a greater or lesser number of contacts 72 may be includedupon surface 23 of card 22. During testing, the probe contacts 72 of theprobe card 22 may contact die contacts within one die. After testing theparticular die 80, the probe card 22 may contact die contacts within adifferent die 80 to test that die 80. Such process may be repeated untilall dies 80 of wafer 34 are tested.

FIG. 4 depicts a normal view of wafer 34, in accordance with one or moreembodiments of the present invention. Wafer 34 may include a pluralityof dies 80 separated by kerfs 85. Each die 80 may include an activeregion, wherein integrated circuit devices, microelectronic devices,etc. may be built using microfabrication process steps such as doping orion implantation, etching, deposition of various materials,photolithographic patterning, electroplating, etc.

FIG. 5 depicts a detailed normal view of a die 80 of wafer 34, inaccordance with one or more embodiments of the present invention. Eachdie 80 includes a grid 90 of contacts 92. Grid 90 may be organized intorows and columns of contacts 92. Grid 90 may be a square matrix ofcontacts 92. Controlled collapse chip connection (C4) material 94, suchas solder, or the like, may be upon each contact 92. Though an exemplarynumber of contacts 92 are depicted, a greater or lesser number ofcontacts 92 may be included upon each die 80.

FIG. 6 depicts a cross section view of contact probes 72 in electricalcontact with die 80 contacts 92, in accordance with one or moreembodiments of the present invention. Contact probe 72 may include abase portion 74 and a tip portion 76. Tip portion 76 generally has adiameter less than the diameter than base portion 74. Tip portion 76 mayprotrude from base portion 74 and may share a same bisector axis that isnormal to the IC device facing surface 23 of card 22. To test the die 80of wafer 34, wafer chuck 30 moves the wafer 34 toward the head assembly20 such that the contacts 90 are aligned with probe contacts 72.Subsequently, the wafer 34 is forced into head assembly 20 and the probecontacts 72 contact at least the C4 material 94 of contacts 92. Probecontacts 72, C4 material 94, and contacts 92 are generally electricallyconductive.

A first test signal may be sent from analyzer 19 by way of a firstelectrical pathway to a first probe contact 72 and into the die 80 byway of the associated electrically connected C4 material 94 andassociated contact 92. The first test signal may cross one or moreintegrated circuit devices, microelectronic devices, or the like, withindie 80, thereby becoming a first return signal. The first test returnsignal may be received by analyzer 19 by way of the first electricalpathway from the first probe contact 72 or from a different electricalpathway associated with a contact 72 different from the first contact72. A second test signal may be sent from analyzer 19 by way of a secondelectrical pathway to a second probe contact 72 and into the die 80 byway of the associated electrically connected C4 material 94 andassociated contact 92. The second test signal may cross one or moreintegrated circuit devices, microelectronic devices, or the like, withindie 80, thereby becoming a second return signal. The second test returnsignal may be received by analyzer 19 by way of the second electricalpathway from the first probe contact 72 or from a different pathwayassociated with a contact 72 different from the second contact 72. Thefirst test signal and the second test signal may be sent and/or receivedby or from analyzer 19 simultaneously.

FIG. 7 depicts residual IC device contact material 94′ upon IC devicetester probes 72, in accordance with one or more embodiments of thepresent invention. After testing wafer 34 and/or testing die 80, headassembly 20 is forced away from wafer 34 causing probe contacts 72 toseparate from wafer 34 and/or die 80. In some instances, residualcontact material 94′ adheres to one or more probe contacts 72 and theresidual contact material 94′ is deposited or otherwise adhered to theprobe contact(s) 72. Such residual contact material 94′ upon the probecontact(s) 72 may contaminate the probe card 22 and may force the probecard 22 to be replaced with a probe card 22 without such residualcontact material 94′ upon its probe contact(s) 72.

FIG. 8 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. In the present fabrication state, a conductive glass frit 100is formed upon probe card 22.

Conductive glass frit 100 is a material, such as a paste, that includesa glass powder, a conductive organic binder, and solvents. A low meltingglass paste may be milled into powder (grain size<15 μm) and mixed witha conductive organic binder to form a printable or a sprayable viscouspaste. A filler or fillers, such as but not limited to cordieriteparticles or barium silicate, may be added to influence properties, i.e.lowering the mismatch of thermal expansion coefficients between that ofthe probe card 22 and the conductive glass frit 100. The solvents may beused to adjust the material viscosity. The conductive organic binder maybe an intrinsically conducting polymer.

The conductive glass frit 100 may be formed upon the probe head card 22and probe contacts 72 by, for example, spraying, spin coating, or thelike, a blanket conductive glass frit 100 layer upon probe card 22 andprobe contacts 72 to a thickness greater than the probe contacts 72 tocover the probe card 22 and probe contacts 72. In other implementations,the conductive glass frit 100 may be formed locally upon just the probecontacts 72 by, for example, screen printing, or the like, theconductive glass frit 100 upon just the probe contacts 72.

FIG. 9 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. At the present fabrication stage, excess conductive glassfrit 100 (if any) may be evaporated with an evaporation technique 110while conductive glass frit 100 upon the probe contacts 72 is retained.For example, excess conductive glass frit 100 is evaporated and localconductive glass frit 112 a is retained upon probe contact 72 a, localconductive glass frit 112 b is retained upon probe contact 72 b, andlocal conductive glass frit 112 c is retained upon probe contact 72 c.The evaporation technique may be leaving the wafer 34 in an ambient orheated environment for a predetermined time to evaporate excessconductive glass frit 100 while pulling conductive glass frit 100 ontoprobe contacts 72 thereby forming local conductive glass frit 112 a, 112b, 112 c.

FIG. 10 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. In the present fabrication stage, the local conductive glassfrit upon probe contacts is thermally conditioned by a laser heatingtechnique 120. For example, a laser is scanned across surface 23 ofprobe card 22 and a laser beam 122 is directed at each probe contact 72.The laser beam 122 may have a width “n” which is less than or equal to awidth “m” of probe contact 72. The laser beam 122 may have a centralbisector axis 123.

The laser beam 122 may directly thermally condition the local conductiveglass frit upon the contact or may indirectly thermally condition thelocal conductive glass frit by directly heating the associated probecontact. For example, laser beam 122 may directly thermally conditionthe local conductive glass frit upon the contact if most of the laserbeam 122 energy is absorbed by the local conductive glass frit.Alternatively, the laser beam 122 may indirectly thermally condition thelocal conductive glass frit upon the contact if the minority of thelaser beam 122 energy is absorbed by the local conductive glass frit andmost of the laser beam energy is absorbed by the associated contact.

The laser may be scanned across surface 23 of probe card 22. When thelaser is positioned above contact 72 a, the laser directs the laser beam122 at probe contact 72 a such that the central bisector axis 123 iscoincident with a central bisector axis 73 a of probe contact 72 a for apredetermined time to thermally condition the local conductive glassfrit 112 a to form conductive glass matrix 130 a, as shown in FIG. 11.After thermally conditioning local conductive glass frit 112 a, thelaser may turn off the laser beam 122 and may be moved above contact 72b. Subsequently, the laser may direct the laser beam 122 at probecontact 72 b such that the central bisector axis 123 is coincident witha central bisector axis 73 b of probe contact 72 b for the predeterminedtime to thermally condition local conductive glass frit 112 b to formconductive glass matrix 130 b, as shown in FIG. 11. After thermallyconditioning local conductive glass frit 112 b, the laser may turn offthe laser beam 122 and may be moved above contact 72 c. Subsequently,the laser may direct the laser beam 122 at probe contact 72 c such thatthe central bisector axis 123 is coincident with a central bisector axis73 c of probe contact 72 c for the predetermined time to thermallycondition local conductive glass frit 112 c to form conductive glassmatrix 130 c, as shown in FIG. 11. Such scanning technique may be usedto thermally condition the local conductive glass frit upon each probecontact 72 within grid 70.

Thermal conditioning of the conductive glass frit transforms theconductive glass frit into a matrix of conductive organic material andglass, which may be referred to as conductive glass matrix, and forms aconnection between the conductive glass matrix and the probe contact 72.The formation of the conductive glass matrix by these thermalconditioning techniques allows for the local thermal conditioning ofconductive glass frit while subjecting the probe card 22 to minimaltemperature increases such that the temperature of the probe card 22 ismaintained to be below the critical temperature that damages the probecard. For example, if probe card 22 includes organic material, thecritical temperature that damages such organics may be 200° C.Therefore, thermally conditioning technique by such laser heatingtechnique 120 allows for the local thermal conditioning of conductiveglass frit to form the conductive glass matrix (with local temperaturesmay reach 800° C.) while the temperature of probe card 22 is maintainedbelow 200° C.

Thermally conditioning may include an initial stage of drying theconductive glass frit to diffuse solvents out of the interface of theconductive glass frit and the probe contact and to start polymerizationof the conductive organic material to long-chain polymers. In anotherstage, the conductive glass frit may be further heated to a temperaturewhere the glass powder has not fully melted to allow for outgassing. Inanother stage, the conductive glass frit is further heated to form glassinterspersed with the polymerized conductive organic to form theconductive glass matrix.

FIG. 11 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. In the present fabrication stage, the conductive glass frithas been thermally conditioned by the laser heating technique 120depicted in FIG. 10 to thereby form conductive glass matrix 130. Forexample, conductive glass matrix 130 a is formed upon probe contact 72a, conductive glass matrix 130 b is formed upon probe contact 72 b, andconductive glass matrix 130 c is formed upon probe contact 72 c.

The conductive glass matrix 130 upon the contact 72 may serve as a linerthat is connected to the exterior surfaces of the probe contact 72. Forexample, conductive glass matrix 130 a lines the sidewall surfaces andthe IC device facing surfaces of the base portion and the tip portion ofprobe contact 72 a, conductive glass matrix 130 b lines the sidewallsurfaces and the IC device facing surfaces of the base portion and thetip portion of probe contact 72 b, and conductive glass matrix 130 clines the sidewall surfaces and the IC device facing surfaces of thebase portion and the tip portion of probe contact 72 c.

The conductive glass matrix 130 is composed of metal and glassparticles. The mass percent of conductive glass matrix 130 can rangefrom 5 to 50% glass, with a preferred glass percentage of 10%. The glassand/or metal particles may be on the order of 5 to 100 um in diameter,with a preferred diameter of 10 um. The thickness of conductive glassmatrix 130 may be 25 to 1000 um. In a particular embodiment, the metalparticles may be silver particles, or the like.

The metal within conductive glass matrix 130 is electrically connectedin such a way that current can percolate through the conductive glassmatrix 130. For example, the metal and glass particles within conductiveglass matrix 130 may be randomly arranged in a lattice siteconfiguration, where each lattice site is randomly occupied by a metalparticle or by a glass particle. The probability of the lattice sitebeing occupied by a metal particle is probably “c” and the probabilityof the lattice site being occupied by a glass particle is probably“1-c.” At a low concentration “c,” the metal particle sites are eitherisolated or form small clusters of nearest neighbor lattice sites. Twometal particle sites belong to the same cluster if they are connected bya part of nearest neighbor metal particle sites, and a current can flowbetween them. At low “c” values, the conductive glass matrix 130 is aninsulator, since no conducting path connects opposite surfaces of theconductive glass matrix 130. At large “c” values, many conducing pathsbetween opposite surfaces of the conductive glass matrix 130 exist,where current can flow, and conductive glass matrix 130 is a conductor.At some percolation threshold, a concentration “c” exists where for thefirst time current can percolate from one surface of the conductiveglass matrix 130 to the opposite surface. As such, conductive glassmatrix 130 has a threshold number of random lattice sites occupied bymetal particles in conductive glass matrix 130 that current canpercolate from one side of conductive glass matrix 130 to an oppositeside of conductive glass matrix 130.

FIG. 12 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. In the present fabrication state, a conductive glass frit 100is formed upon probe card 22. The conductive glass frit 100 may beformed upon the probe card 22 and probe contacts 72 by, for example,spraying, spin coating, or the like, a blanket conductive glass frit 100layer upon probe card 22 and probe contacts 72 to a thickness greaterthan the probe contacts 72 to cover the probe card 22 and probe contacts72. In other implementations, the conductive glass frit 100 may beformed locally upon just the probe contacts 72 by, for example, screenprinting, or the like, the conductive glass frit 100 upon just the probecontacts 72.

FIG. 13 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. In the present fabrication stage, the conductive glass fritupon probe contacts is thermally conditioned by a laser heatingtechnique 120 while excess conductive glass frit not upon probe contactsis retained. A laser may be moved to each probe contact 72 and a laserbeam 122 is directed at each probe contact 72. The laser beam 122 mayhave a width “n” which is less than or equal to a width “m” of probecontact 72. The laser beam 122 may have a central bisector axis 123.

The laser may be scanned to sequentially thermally condition theconductive glass frit that is upon each contact 72 of the grid 70 ofprobe card 22. The laser may be positioned above contact 72 a and thelaser may direct the laser beam 122 at probe contact 72 a such that thecentral bisector axis 123 is coincident with a central bisector axis 73a of probe contact 72 a for a predetermined time to thermally conditionthe conductive glass frit that is nearest contact 72 a. After thermallyconditioning the conductive glass frit that is nearest contact 72 a, thelaser may turn off the laser beam 122 and may be moved above contact 72b. Subsequently, the laser may direct the laser beam 122 at probecontact 72 b such that the central bisector axis 123 is coincident witha central bisector axis 73 b of probe contact 72 b for the predeterminedtime to thermally condition the conductive glass frit that is nearestcontact 72 b. After thermally conditioning the conductive glass fritthat is nearest contact 72 b, the laser may turn off the laser beam 122and may be moved above contact 72 c. Subsequently, the laser may directthe laser beam 122 at probe contact 72 c such that the central bisectoraxis 123 is coincident with a central bisector axis 73 c of probecontact 72 c for the predetermined time to thermally condition theconductive glass frit that is nearest contact 72 c. Such scanningtechnique may be used to thermally condition the local conductive glassfrit upon each probe contact 72 within grid 70.

FIG. 14 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. In the present fabrication stage, the conductive glass fritnearest the probe contacts 72 has been thermally conditioned by thelaser heating technique 120 to form conductive glass matrix 130 upon thecontacts 72 and excess conductive glass frit 100′ further from the probecontacts 72 has been retained.

The laser beam 122 may directly thermally condition the conductive glassfrit nearest the contact 72 or may indirectly thermally condition theconductive glass frit nearest the contact 72 by directly heating theprobe contact 72. For example, laser beam 122 may directly thermallycondition the conductive glass frit nearest the contact 72 and formconductive glass matrix 130 if most of the laser beam 122 energy isabsorbed by this conductive glass frit while the excess conductive glassfrit that is further from the probe contact does not receive adequateenergy and does not reach a temperature for it to thermally conditioninto conductive glass matrix 130. As such, excess conductive glass frit100′ that is further from the probe contact is retained. Alternatively,the laser beam 122 may indirectly thermally condition the conductiveglass frit nearest the contact 72 if most of the laser beam 122 energyis absorbed by the contact 72 thereby heating the contact 72 such thatadequate heat transfers to the conductive glass frit that is nearest thecontact 72 to form conductive glass matrix 130 while the excessconductive glass frit that is further from the probe contact 72 does notreceive adequate heat transfer for it to thermally condition intoconductive glass matrix 130 thereby retaining the excess conductiveglass frit 100′ that is further from probe contact 72. Each of thecontacts 72 may have conductive glass matrix 130 formed thereupon. Forexample, conductive glass matrix 130 a is formed upon contact 72 a,conductive glass matrix 130 b is formed upon contact 72 b, andconductive glass matrix 130 c is formed upon contact 72 c.

Thermal conditioning of the conductive glass frit transforms theconductive glass frit into a matrix of conductive organic material andglass, which may be referred to as conductive glass matrix, and forms aconnection between the conductive glass matrix and the probe contact 72.The formation of the conductive glass matrix by these thermalconditioning techniques allows for the local thermal conditioning ofconductive glass frit while subjecting the probe card 22 to minimaltemperature increase such that the temperature of the probe card 22 ismaintained to be below the critical temperature that damages the probecard. For example, if probe card 22 includes organic material, thecritical temperature that damages such organics may be 200° C.Therefore, thermally conditioning technique by such laser heatingtechnique 120 allows for the local thermal conditioning of conductiveglass frit to form the conductive glass matrix while the temperature ofprobe card 22 is maintained below 200° C.

Thermal conditioning may include an initial stage of drying theconductive glass frit to diffuse solvents out of the interface of theconductive glass frit and the probe contact and to start polymerizationof the conductive organic material to long-chain polymers. In anotherstage, the conductive glass frit may be further heated to a temperaturewhere the glass powder has not fully melted to allow for outgassing. Inanother stage, the conductive glass frit is further heated to form glassinterspersed with the polymerized conductive organic to form theconductive glass matrix.

FIG. 15 depicts a cross section view of a probe card 22 fabricationstage, in accordance with one or more embodiments of the presentinvention. In the present fabrication stage, conductive glass matrix 130upon the contacts 72 is retained and excess conductive glass frit 100′is removed. For example, conductive glass matrix 130 a is retained uponprobe contact 72 a, conductive glass matrix 130 b is retained upon probecontact 72 b, and conductive glass matrix 130 c is retained upon probecontact 72 c while excess conductive glass frit 100′ that did notthermally condition is removed.

The conductive glass matrix 130 upon the contact 72 may serve as a linerthat is connected to the exterior surfaces of the probe contact 72. Forexample, conductive glass matrix 130 a lines the sidewall surfaces andthe IC device facing surfaces of the base portion and the tip portion ofprobe contact 72 a, conductive glass matrix 130 b lines the sidewallsurfaces and the IC device facing surfaces of the base portion and thetip portion of probe contact 72 b, and conductive glass matrix 130 clines the sidewall surfaces and the IC device facing surfaces of thebase portion and the tip portion of probe contact 72 c.

FIG. 16 depicts a cross section view of head assembly 20 components ofIC device tester 10, in accordance with one or more embodiments of thepresent invention. More specifically, FIG. 16 depicts probe card 22 andprobe head 24. Probe head 24 may include a contact grid 40 of contacts42. Grid 40 may be organized into rows and columns of contacts 42. Grid40 may be a square matrix of contacts 42.

Probe card 22 includes an IC device facing surface 23 that includes agrid 70 of probe contacts 72 with a conductive glass matrix 130 linerupon each contact 72. The conductive glass matrix 130 liner uponcontacts 72 allow for the electrical pathways, that may be isolatedrelative to each other, to exist from the analyzer 19, through cable 23,through the head body 26, through the probe head 24, through the probecard 22, through a particular contact probe 72 of probe card 22, andthrough the conductive glass matrix 130 liner upon the contact 72. Thetest signals may be sent from analyzer 19 to wafer 34 and returned fromthe wafer 34 to analyzer 19 by way of the respective electricalpathways.

A first test signal may be sent from analyzer 19 by way of a firstelectrical pathway to a first probe contact 72, through the firstconductive glass matrix 130 liner thereupon, and into the die 80 by wayof the associated electrically connected C4 material 94 and associatedcontact 92. The first test signal may cross one or more integratedcircuit devices, microelectronic devices, or the like, within die 80,thereby becoming a first return signal. The first test return signal maybe received by analyzer 19 by way of the first electrical pathway fromthe first probe contact 72 through its conductive glass matrix 130 lineror from a different electrical pathway associated with a contact 72different from the first contact 72. A second test signal may be sentfrom analyzer 19 by way of a second electrical pathway to a second probecontact 72 through its conductive glass matrix 130 liner and into thedie 80 by way of the associated electrically connected C4 material 94and associated contact 92. The second test signal may cross one or moreintegrated circuit devices, microelectronic devices, or the like, withindie 80, thereby becoming a second return signal. The second test returnsignal may be received by analyzer 19 by way of the second electricalpathway from the first probe contact 72 through its conductive glassmatrix 130 liner or from a different pathway associated with a contact72 different from the second contact 72. The first test signal and thesecond test signal may be sent and/or received by or from analyzer 19simultaneously.

FIG. 17 depicts a cross section view of an IC device tester probecontact 72 with a conductive glass matrix 130 liner in electricalcontact with an IC device contact 90, in accordance with one or moreembodiments of the present invention. To test the die 80 of wafer 34,wafer chuck 30 moves the wafer 34 toward the head assembly 20 such thatthe contact 90 is aligned with probe contact 72. Subsequently, the wafer34 is forced into head assembly 20 and the conductive glass matrix 130liner upon the probe contacts 72 contacts at least the C4 material 94 ofcontact 90. Conductive glass matrix 130 liner, probe contacts 72, C4material 94, and contacts 92 are generally electrically conductive.Therefore, the electrical pathway contact 72 is maintained even thoughthe contact 72 has the conductive glass matrix 130 liner formedthereupon.

An incoming electrical current 191 from analyzer 19 is passed fromcontact 72 through glass matrix 130 liner to probe contact 90 and intothe die. The incoming electrical current 191 may cross one or moreintegrated circuit devices, microelectronic devices, or the like, withinthe die, thereby becoming return electrical current 193. The returnelectrical current 193 is passed from contact 90 to the probe contact 72through conductive glass matrix 130 liner to analyzer 19.

FIG. 18 depicts a cross section view of an IC device tester probeseparated from an IC device contact, in accordance with one or moreembodiments of the present invention. After testing wafer 34 and/ortesting die 80, head assembly 20 is forced away from wafer 34 causingprobe contact 72 to separate from wafer 34 and/or die 80. Due to theglass within conductive glass matrix 130 liner, contact material 94 doesnot adhere to or is relatively less likely to adhere to the conductiveglass matrix 130 liner upon the probe contact 72, and no residualcontact material or relatively less contact material is deposited orotherwise adhered to the conductive glass matrix 130 liner. As such,less residual contact material upon the conductive glass matrix 130liner of probe contact 72 less frequently contaminates the probe card 22and thereby allows the probe card 22 to be replaced less frequentlythereby extending the useful life of the probe card 22.

FIG. 19 depicts an exemplary method 200 of fabricating an IC devicetester probe card 22, in accordance with one or more embodiments of thepresent invention. Method 200 may begin at block 202 and continue withapplying conductive glass frit 100 upon the IC device facing surface 23of probe card 22 and upon grid 70 of probe contacts 72 (block 204). Theconductive glass frit 100 may be formed by spraying, spin coating, orthe like, conductive glass frit 100 upon IC device facing surface 23 ofprobe card 22 and upon grid 70 of probe contacts 72. Alternatively, theconductive glass frit 100 may be formed by screen printing conductiveglass frit 100 locally upon just the probe contacts 72.

Method 200 may continue with evaporating excess conductive glass frit100 material (block 206) and retaining conductive glass frit 112 that isjuxtaposed upon the probe contacts 72 (block 208). For example, anevaporation technique 110 may evaporate excess conductive glass frit 100material by drawing in remaining conductive glass frit to the probecontacts 72 to form conductive glass frit 112 thereupon.

Method 200 may continue with locally thermally conditioning theconductive glass frit 112 that is upon the probe contact 72 (block 210).For example, a laser heating technique 120 may locally thermallycondition the conductive glass frit 112 that is upon each probe contact72 within the grid 70 to form the glass matrix 130 liner upon eachcontact 72 without subjecting the probe card to temperatures above thecritical temperature that damage the probe card 22. Method 200 may endat block 212.

FIG. 20 depicts an exemplary method 220 of fabricating an IC devicetester probe card 22, in accordance with one or more embodiments of thepresent invention. Method 220 may begin at block 222 and continue withapplying conductive glass frit 100 upon the IC device facing surface 23of probe card 22 and upon grid 70 of probe contacts 72 (block 224). Theconductive glass frit 100 may be formed by spraying, spin coating, orthe like, conductive glass frit 100 upon IC device facing surface 23 ofprobe card 22 and upon grid 70 of probe contacts 72. Alternatively, theconductive glass frit 100 may be formed by screen printing conductiveglass frit 100 locally upon just the probe contacts 72.

Method 220 may continue with thermally conditioning the conductive glassfrit 100 that is nearest the contact 72 while retaining non-thermallyconditioned conductive glass frit 100 further away from the contact 72(block 226). For example, a laser heating technique 120 may thermallycondition the conductive glass frit 100 at the interface of each probecontact 72 within the grid 70 to form the glass matrix 130 liner uponeach contact 72 without subjecting the probe card to temperatures abovethe critical temperature that damage the probe card 22 while excessconductive glass frit 100′ that is further away from the contacts 72 isretained.

Method 220 may continue with removing the non-thermally conditionedconductive glass frit 100 (block 228). For example, the excessconductive glass frit 100′ that has not been thermally conditionedbecause of its relative further distance from the contacts 72 is removedor washed away thereby leaving the glass matrix 130 liner upon eachcontact 72. Method 220 may end at block 230.

The accompanying figures and this description depicted and describedembodiments of the present invention, and features and componentsthereof. Those skilled in the art will appreciate that any nomenclatureused in this description was merely for convenience, and thus theinvention should not be limited by the specific process identifiedand/or implied by such nomenclature. Therefore, it is desired that theembodiments described herein be considered in all respects asillustrative, not restrictive, and that reference be made to theappended claims for determining the scope of the invention.

References herein to terms such as “vertical”, “horizontal”, etc. aremade by way of example, and not by way of limitation, to establish aframe of reference. The term “horizontal” as may be used herein isdefined as a plane parallel to the conventional plane or surface ofprobe card 22, regardless of the actual spatial orientation of the probecard 22. The term “vertical” refers to a direction perpendicular to thehorizontal, as just defined. Terms, such as “on”, “above”, “below”,“side” (as in “sidewall”), “higher”, “lower”, “over”, “beneath,”“under”, “top,” “bottom,” “left,” “right,” or the like, are used withrespect to the horizontal plane. It is understood that various otherframes of reference may be employed for describing the present inventionwithout departing from the spirit and scope of the present invention.

What is claimed is:
 1. A method of testing an integrated circuit (IC)device, the method comprising: passing an incoming electrical currentfrom a probe contact through a conductive glass matrix liner upon eachexterior surface of the probe contact and through a solder bump upon anIC device contact to the IC device contact; receiving, with the probecontact, a return electrical current from the IC device contact throughthe solder bump and through the conductive glass matrix liner.
 2. Themethod of claim 1, wherein the IC device is a wafer.
 3. The method ofclaim 1, wherein the IC device is a die.
 4. The method of claim 1,wherein the conductive glass matrix liner comprises a matrix of aconductive polymer and glass.
 5. The method of claim 1, wherein theconductive glass matrix liner prevents material of the solder bump fromadhering thereto.
 6. A method of fabricating an integrated circuit (IC)device probe card, the method comprising: forming a conductive glassfrit upon a probe contact and upon the IC device probe card; evaporatingconductive glass frit upon the IC device probe card and retaining theconductive glass frit upon the probe contact; and locally thermallyconditioning the conductive glass frit upon the probe contact to form aconductive glass matrix liner upon the probe contact.
 7. The method ofclaim 6, wherein thermally conditioning the conductive glass fritcomprises: directing a laser beam to directly thermally condition theconductive glass frit upon the probe contact.
 8. The method of claim 7,wherein a central bisector axis of the laser beam is coincident with acentral bisector axis of the probe contact.
 9. The method of claim 7,wherein a diameter of the laser beam is less than a diameter of theprobe contact.
 10. The method of claim 6, wherein thermally conditioningthe conductive glass frit comprises: directing a laser beam to the probecontact and indirectly thermally conditioning the conductive glass fritupon the probe contact by transferring heat from the probe contact tothe conductive glass frit upon the probe contact.
 11. The method ofclaim 6, wherein the conductive glass matrix liner prevents material ofa solder bump of an IC device contact from adhering thereto.
 12. Amethod of fabricating an integrated circuit (IC) device probe card, themethod comprising: forming a conductive glass frit upon a probe card andupon a probe contact; thermally conditioning the conductive glass fritso as to form a conductive glass matrix liner upon and nearest the probecontact so as to retain non-thermally conditioned conductive glass frit;removing the non-thermally conditioned conductive glass frit.
 13. Themethod of claim 12, wherein thermally conditioning the conductive glassfrit comprises: directing a laser beam to directly thermally conditionthe conductive glass frit upon and nearest the probe contact.
 14. Themethod of claim 13, wherein a central bisector axis of the laser beam iscoincident with a central bisector axis of the probe contact.
 15. Themethod of claim 12, wherein thermally conditioning the conductive glassfrit comprises: directing a laser beam to the probe contact andindirectly thermally conditioning the conductive glass frit upon andnearest the probe contact by transferring heat from the probe contact tothe conductive glass frit upon and nearest the probe contact.
 16. Themethod of claim 12, wherein the conductive glass matrix liner preventsmaterial of a solder bump of an IC device contact from adhering thereto.